[6] A. Berkovich, M. Lecca, L. Gasparini, P. Abshire, and M. Gottardi,“A 30 w 30 fps 110x110 像素s vision sensor embedding local binarypatterns,” Solid-State Circuits, IEEE Journal of, vol. 50, no. 9, pp. 2138–2148, Sept 2015.

[7] N. Cottini, M. Gottardi, N. Massari, R. Passerone, and Z. Smilansky,“A 33w64;; 64 像素 vision sensor embedding robust dynamicbackground subtraction for event detection and scene interpretation,”Solid-State Circuits, IEEE Journal of, vol. 48, no. 3, pp. 850–863, March2013.

[8] L. Chua, “Memristor - the missing circuit element,” IEEE Trans. CircuitTheory, no. 18, pp. 517–519, 1971.

[9] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “Themissing memristor found,” Nature, vol. 453, no. 7191, pp. 80–83, 2008.

[10] J. Blanc and D. L. Staebler, “Electrocoloration in srti o 3: Vacancy driftand oxidation-reduction of transition metals,” Physical Review B, vol. 4,no. 10, p. 3548, 1971.

[11] M. P. Sah, C. Yang, H. Kim, and L. Chua, “A voltage mode memristorbridge synaptic circuit with memristor emulators,” Sensors, vol. 12,no. 3, pp. 3587–3604, 2012.

[12] L. O. Chua and S. M. Kang, “Memristive devices and systems,”Proceedings of the IEEE, vol. 64, no. 2, pp. 209–223, 1976.

[13] S. Shin, K. Kim, and S.-M. Kang, “Memristor applications for programmableanalog ics,” Nanotechnology, IEEE Transactions on, vol. 10,no. 2, pp. 266–274, 2011.

[14] S. Shin, K. Kim, and S. M. Kang, “Memristor-based fine resolutionprogrammable resistance and its applications,” in Communications,Circuits and Systems, 2009. ICCCAS 2009. International Conferenceon. IEEE, 2009, pp. 948–951.

[15] O. A. Olumodeji and M. Gottardi, “Memristor-based comparatorwith programmable hysteresis,” in Microelectronics and Electronics(PRIME), 2015 11th Conference on Ph. D. Research in. IEEE, 2015,pp. 232–235.