430的數(shù)據(jù)RAM 與FLASH的讀寫

#define FLASH_ADDRESS 0x1000 //定義FLASH信息區(qū)地址B段
void flash_erase(unsigned char*);

void read_flash(unsigned char *pc_byte, unsigned char *array,unsigned char amount);

void write_flash(unsigned char *pc_byte,unsigned char *array,unsigned char amount);

//******************************************************************************

//FLASH段擦除

void flash_erase(unsigned char *pc_word)

{

while(FCTL3 & BUSY); //如果處于忙狀態(tài)，則等待

FCTL3 = FWKEY ; //清出LOCK標(biāo)志，解鎖

FCTL1 = FWKEY + ERASE ; //允許段擦除

*pc_word = 0; //擦除..擦除..

while(FCTL3 & BUSY);

FCTL3 = FWKEY + LOCK ; //加鎖

}

//******************************************************************************

//向FLASH信息區(qū)讀出指定數(shù)量的字節(jié)數(shù)據(jù)

//unsigned int*pc_word :信息區(qū)數(shù)據(jù)指針

//unsigned char *array :讀出數(shù)據(jù)存放數(shù)據(jù)數(shù)組,8位長

//unsigned char amount :讀操的數(shù)量,范圍0-127

void read_flash(unsigned char *pc_byte, unsigned char *array,unsigned char amount)

{ unsigned char i;

for(i=0;i

{

*array = *pc_byte; //讀數(shù)據(jù)，讀數(shù)據(jù)時，flash地址自動加 1

array++; //接收緩沖區(qū)地址加 1

}
}

//******************************************************************************

//向FLASH信息區(qū)寫入指定數(shù)量的字節(jié)數(shù)據(jù)

//unsigned char *pc_byte 信息區(qū)數(shù)據(jù)指針

//unsigned char *array :讀出數(shù)據(jù)存放數(shù)據(jù)數(shù)組,8位長

//unsigned char amount :讀操的數(shù)量,范圍0-127

void write_flash(unsigned char *pc_byte,unsigned char *array, unsigned char amount)

{ unsigned char i;
_DINT();

while(FCTL3 & BUSY); //如果處于忙狀態(tài)，則等待

FCTL3 = FWKEY ; //清出LOCK標(biāo)志

FCTL1 = FWKEY + WRT ; //寫操作，塊編程，+ BLKWRT;

for(i=0;i

{

*pc_byte = *array;

//*pc_byte = num;

// num +=1;

array++; //發(fā)送緩沖區(qū)地址加 1

pc_byte++; //寫flash時，地址人為加 1

while(!(FCTL3 & WAIT)); //如果處于忙狀態(tài)，則等待　，若用軟件仿真，去掉　　　　　　　　　　　　　　　　?。@語句

}

FCTL1 = FWKEY; //寫操作完成，清除編程允許位 WRT，BLKWRT

while(FCTL3 & BUSY);

FCTL3 = FWKEY + LOCK;

}

/*

#define RAM_ADDRESS 0x300
__no_init volatile uchar XINHAO[3] @ 0x300; //型號 默認(rèn)201
__no_init volatile uchar BdFlag @ 0x303; ////ff表示沒有標(biāo)定,00表示已標(biāo)定置零01表示已標(biāo)定1點(diǎn).02表示已標(biāo)定2點(diǎn).03表示已標(biāo)定3點(diǎn)
__no_init volatile uchar EDZHI @ 0x304; //額定值
__no_init volatile uchar CYSJ @ 0x305; //采樣時間
__no_init volatile uchar GJSJ @ 0x306; //自動關(guān)機(jī)時間
__no_init volatile uchar YLDW @ 0x307; // 壓力單位
__no_init volatile float Pyz @ 0x30A; // 置零后的皮壓值
__no_init volatile float Bdxs[16] @ 0x310; // 標(biāo)定系數(shù)
__no_init volatile float Bdzhi[16] @ 0x350; // 標(biāo)定值
__no_init volatile float Bdnm[16] @ 0x390; // 標(biāo)定內(nèi)碼0X0D0

void main(void)
{
volatile unsigned int i; // Use volatile to prevent removal
// by compiler optimization

WDTCTL = WDTPW + WDTHOLD; // Stop WDT
FLL_CTL0 |= XCAP14PF; // Configure load caps
for (i = 0; i < 10000; i++); // Delay for 32 kHz crystal to
unsigned char *pc_flash; //定義字節(jié)指針變量 為字節(jié)讀寫
pc_flash = (unsigned char *) FLASH_ADDRESS; //為指針初始化 // stabilize
unsigned char *pc_ram; //定義字節(jié)指針變量 為字節(jié)讀寫
pc_ram = (unsigned char *) RAM_ADDRESS; //為指針初始化

while(1)

{
BdFlag = 1;
Bdxs[0]=3.14;
flash_erase(pc_flash); //段擦除
write_flash(pc_flash,pc_ram ,208); //寫入指定字節(jié)數(shù)量
read_flash(pc_flash,pc_ram,208); //再讀出剛才寫的字節(jié)
LPM3; // Enter low power mode 3
} */